Congratulations to Dr. Benjamin Olson!
Congratulations to Benjamin Olson for successfully defending his PhD dissertation on "Time-Resolved Measurements of Charge Carrier Dynamics and Optical Nonlinearities in Narrow-Bandgap Semiconductors."
"After the flood of 2008, Ben completely rebuilt our ultrafast optics lab in the Iowa Advanced Technology Laboratory, specifying, purchasing, and setting up numerous optical systems. This included an amplified ultrafast Ti:Sapphire laser with two synchronized infrared optical generators/amplifiers producing ultrashort pulses at wavelengths from ~ 2-18 microns. He subsequently used this system to 1) measure electron and hole transport through InAs/GaSb superlattices relevant to infrared focal-plane array technology, 2) to measure nondegenerate (i.e., two distinct wavelength) two-photon absorption in GaSb, and 3) to measure Shockley-Read-Hall, radiative, and Auger recombination in both InAs/GaSb and InAs/InAsSb midwave infrared superlattices. Ben's measurements of carrier recombination demonstrated record lifetimes in the InAs/InAsSb superlattices (grown at Sandia National Laboratories), illustrating the promise of these materials for potential application to next-generation midwave infrared focal plane arrays."
— Thomas Boggess, PhD advisor
Benjamin has received an Intelligence Community Postdoctoral Research Fellow position at Sandia National Laboratories.